28-29 November 2019
ILL4
Europe/Paris timezone

Physical analysis workflow in context of GaN HEMT failure analysis.

28 Nov 2019, 09:45
23m
ILL4-rdc-1 - Amphi Chadwick (ILL4)

ILL4-rdc-1 - Amphi Chadwick

ILL4

71 avenue des Martyrs 38000 Grenoble
110
Micro- & nano-electronics Industrial sessions: Keynote Speakers

Speaker

Dr. Thomas DEMONCHAUX (SERMA Technologies)

Description

This talk reports the workflow developed to characterize AlGaN/GaN high electron mobility transistors (HEMTs) gate defects in order to link physical defects with their electrical signature. Taking into account the particularities of GaN technologies such as the thin active layer and the interface quality importance, we correlated different technics ranging from «Slice&View» to Transmission Electron Microscopy (TEM) and EDS-EELS mapping to identify defects with their electrical signature.

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