28-29 November 2019
Europe/Paris timezone

Physical analysis workflow in context of GaN HEMT failure analysis.

28 Nov 2019, 09:45
ILL4-rdc-1 - Amphi Chadwick (ILL4)

ILL4-rdc-1 - Amphi Chadwick


71 avenue des Martyrs 38000 Grenoble
Micro- & nano-electronics Industrial sessions: Keynote Speakers


Dr. Thomas DEMONCHAUX (SERMA Technologies)


This talk reports the workflow developed to characterize AlGaN/GaN high electron mobility transistors (HEMTs) gate defects in order to link physical defects with their electrical signature. Taking into account the particularities of GaN technologies such as the thin active layer and the interface quality importance, we correlated different technics ranging from «Slice&View» to Transmission Electron Microscopy (TEM) and EDS-EELS mapping to identify defects with their electrical signature.

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