Description
Networking and exchange on topics covered during the training. Buffet and announcement of the winner of the Best contribution award.
In the last years, the aim of semiconductor industry to produce nanoscale-sized devices determined an increasing interest for a series of 2D materials. Among them, transition metal dichalcogenides (TMDs) are under investigation due to some promising electrical characteristics, such as an inherent band gap and a relatively high mobility of charge carriers, exhibited at nanoscale on single...
Synchrotron radiation and neutron techniques have proved to be powerful tools in the understanding of failure mechanisms and in the characterisation of physical and morphological properties of complex structures for microelectronics. The ability to get high quality local as well as statistical information on defects has become paramount for failure analysis and reliability assessment of new...
InnovaXN, the Doctoral programme for innovators with X-rays and neutrons, is an innovative, new, doctoral training programme that provides an exceptional training opportunity for 40 students. Focussing on cutting-edge research projects of industrial relevance, the students will be immersed in the thriving, international, research environment of the European Synchrotron Radiation Facility...
The current trend is to fabricate (GaN) based devices due to the high energy gap, high breakdown field, and saturation velocity of gallium nitride for high-power amplifiers and high-frequency applications. This paper presents a newly developed compact model for input- output gate field-plated (FP) HEMT based on AlGaN/GaN heterojonction taking into account the effects of spontaneous and...
Europe has many large instruments open to researchers from all over the world, whether they are involved in public or private research. However, it is rare for manufacturers to use these instruments. There are many reasons for this: the first is the lack of knowledge of these large scale infrastructures. Aware of the societal importance of these infrastructures, in particular for the...
Strain mapping of transistor structures in a 22nm Fully Depleted Silicon-On-Insulator technology
D. Kleimaier (1), Z. Zhao (1), D. Utess (1), I. Saadat (2), F. Ravaux (2), K. Sloyan (2)
(1) GLOBALFOUNDRIES, Dresden, Germany
(2) Khalifa University, Abu Dhabi, United Arab Emirates
Email:...
While x-ray diffraction is widely used to non-destructively screen residual stresses at the surface, deeper investigations are often carried out in a destructive manner. The most popular techniques are the contour method and deep hole drilling. Neutron diffraction offers the unique possibility to map the whole stress tensor in the bulk and near the surface of a given component. Penetration...
